ELECTRONIC-STRUCTURE OF A NEUTRAL PHOSPHORUS VACANCY IN GAP AND INP

被引:21
作者
SRIVASTAVA, GP
机构
[1] Physics Department, The New University of Ulster, Coleraine
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 93卷 / 02期
关键词
D O I
10.1002/pssb.2220930234
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An empirical pseudopotential for a neutral phosphorus vacancy is used to calculate, employing the Green's function method, electronic states in the gaps of GaP and InP. An analytic form of the vacancy wave function is determined. The results are compared with previous available calculations. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:761 / 765
页数:5
相关论文
共 12 条
[1]   BAND STRUCTURE AND IMPURITY STATES [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
PHYSICAL REVIEW, 1969, 186 (03) :735-&
[2]   ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210
[3]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].
BERNHOLC, J ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789
[4]  
ILIN NP, 1976, SOV PHYS SEMICOND+, V10, P496
[5]   LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J].
JAROS, M ;
BRAND, S .
PHYSICAL REVIEW B, 1976, 14 (10) :4494-4505
[6]  
JAROS M, 1978, J PHYS CHEM SOLIDS, V39, P331
[7]   WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].
JAROS, M .
PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706
[8]  
JAROS M, 1977, J PHYS CHEM SOLIDS, V38, P1399, DOI 10.1016/0022-3697(77)90015-4
[9]  
MASTEROV VF, 1978, SOV PHYS SEMICOND+, V12, P363
[10]  
Williams R., COMMUNICATION