共 12 条
[2]
ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS
[J].
REPORTS ON PROGRESS IN PHYSICS,
1974, 37 (09)
:1099-1210
[3]
SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
[J].
PHYSICAL REVIEW B,
1978, 18 (04)
:1780-1789
[4]
ILIN NP, 1976, SOV PHYS SEMICOND+, V10, P496
[6]
JAROS M, 1978, J PHYS CHEM SOLIDS, V39, P331
[7]
WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1977, 16 (08)
:3694-3706
[8]
JAROS M, 1977, J PHYS CHEM SOLIDS, V38, P1399, DOI 10.1016/0022-3697(77)90015-4
[9]
MASTEROV VF, 1978, SOV PHYS SEMICOND+, V12, P363
[10]
Williams R., COMMUNICATION