EXPERIMENTAL-STUDY OF BULK LIMITATION OF THE CURRENT IN HYDROGENATED AMORPHOUS-SILICON DIODES

被引：8

作者：

CANNELLA, V ^{[1
]}

MCGILL, J ^{[1
]}

YANIV, Z ^{[1
]}

SILVER, M ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

关键词：

D O I：

10.1016/0022-3093(85)90922-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1421 / 1424

页数：4

共 4 条

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[2] Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[3] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
MACKENZIE, KD
LECOMBER, PG
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04): : 377 - 389
[4] OVSHINSKY SR, 1984, P S GLASS SCI TECHNO