GROWTH AND CHARACTERIZATION OF BE MODULATION-DOPED WIDE PARABOLIC GAAS/ALXGA1-XAS WELLS

被引：3

作者：

HOPKINS, PF ^{[1
]}

CAMPMAN, KL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90735-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Remotely-doped, p-type wide (approximately 1000 angstrom) parabolic GaAs/AlxGa1-xAs quantum wells grown on (100) substrates were used to create high mobility, low density, wide layers of hole gas. Low temperature capacitance-voltage and magnetotransport measurements were used to characterize these structures. Hole gas widths approximately 700 angstrom, sheet densities > 3 X 10(11) cm-2, and mobilities > 23,000 cm2/V.s at T = 0.1 K have been achieved in wells with a curvature corresponding to a three-dimensional density approximately 4 X 10(16) cm-3 . These mobilities are more than three orders of magnitude higher at low temperature than bulk p-type GaAs with similar three-dimensional density.

引用

页码：798 / 802

页数：5

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