SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS

被引：3

作者：

GONZO, L ^{[1
]}

LUI, A ^{[1
]}

BISERO, D ^{[1
]}

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

MATERIALS LETTERS | 1993年 / 18卷 / 1-2期

关键词：

D O I：

10.1016/0167-577X(93)90055-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) in air has been used to investigate the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD). It has been found that, even when working in air, the technique gives detailed information about microroughness and mean grain size. Distinguishing between two different length scales, values for inter- and intra-grain roughness as a function of phosphorus doses are reported.

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页码：50 / 56

页数：7

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