INTERBAND-TRANSITIONS IN STRAIN-SYMMETRIZED GE4SI6 SUPERLATTICES

被引：38

作者：

SCHMID, U ^{[1
]}

LUKES, F ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

ALOUANI, M ^{[1
]}

CARDONA, M ^{[1
]}

KASPER, E ^{[1
]}

KIBBEL, H ^{[1
]}

PRESTING, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.65.1933

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present experimental as well as theoretical data for the linear-optical response of symmetrically strained Ge4Si6 [001] superlattices. Ab initio calculations show that they have a direct gap. The complex dielectric function has been measured ellipsometrically. Agreement of the experimental second-derivative spectrum d22/d2 with the theory is obtained, both for the shape and position of bulklike transitions and for new superlatticelike transitions, after including lifetime effects in the calculated curves through Lorentzian convolution. © 1990 The American Physical Society.

引用

页码：1933 / 1936

页数：4

共 30 条

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