INITIAL GROWTH OF CU FILMS ON OXYGEN COVERED W(110)

被引：4

作者：

XU, H ^{[1
]}

YANG, YW ^{[1
]}

ENGEL, T ^{[1
]}

机构：

[1] UNIV WASHINGTON,SEATTLE,WA 98195

来源：

SURFACE SCIENCE | 1992年 / 275卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(92)90788-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of Cu films on the p(2 X 1)O-W(110) and (1 X 1)O-W(110) surfaces has been monitored using specular He scattering. Deposition at temperatures below 200 K leads to rough films on both surfaces. Deposition at T > 300 K leads to phase separation of Cu and O on the p(2 X 1)O-W(110) surface. Deposition at 300 K on the higher oxygen coverage surface leads to films which are nearly as smooth as these deposited on clean W(110). Deposition at 800 K leads to needle-like crystallite formation without an initial continuous film.

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页码：L707 / L710

页数：4

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