ELECTRICAL MEASUREMENTS AS PERFORMANCE INDICATORS OF ELECTROMIGRATION

被引:3
作者
JONES, BK [1 ]
XU, YZ [1 ]
DENTON, TC [1 ]
机构
[1] BNR EUROPE LTD,HARLOW CM17 9NA,ESSEX,ENGLAND
关键词
ELECTROMIGRATION; RELIABILITY INDICATORS; INTERCONNECTS;
D O I
10.1002/qre.4680100411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements were made of various electrical parameters on metal interconnects at intervals during electromigration life tests. The results show a close correlation between the progression of electromigration and increases of the resistance values, harmonic content and excess noise. Also, the statistical trend of the variations of these parameters with normalized lifetime for a number of failed samples is very consistent with the trend during a continuously monitoring experiment, where the electrical properties of tracks were monitored continuously while being electrically and thermally stressed. There are implications in the potential importance of such measurements for the non-destructive tests of electromigration.
引用
收藏
页码:315 / 318
页数:4
相关论文
共 7 条
[1]  
AHEUWALIA HS, 1982, J APPL PHYS, V53, P6482
[2]  
HEAD LM, 1992, INT REL PHY, P228, DOI 10.1109/RELPHY.1992.187650
[3]   CHARACTERIZATION OF ELECTROMIGRATION DAMAGE BY MULTIPLE ELECTRICAL MEASUREMENTS [J].
JONES, BK ;
XU, YZ .
MICROELECTRONICS AND RELIABILITY, 1993, 33 (11-12) :1829-1840
[4]  
JONES BK, 1992, P C ESREF 92 BERLIN, P363
[5]  
Komori J., 1990, ISTFA 1990. International Symposium for Testing and Failure Analysis. The Failure Analysis Forum for Microelectronics and Advanced Materials. Conference Proceedings, P41
[6]  
NIEHOF J, 1992, P ESREF 92, P359
[7]  
Specchiulli G., 1988, Solid State Devices. Proceedings of the 17th European Solid State Device Research Conference, ESSDERC '87, P369