FILM QUALITY DEPENDENCE OF ADAPTIVE-LEARNING PROCESSES IN NEURODEVICES USING FERROELECTRIC PBZRXTI1-XO3(PZT) FILMS

被引：7

作者：

TOKUMITSU, E

NAKAMURA, R

ITANI, K

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku Yokohama, 226

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

ADAPTIVE LEARNING; PZT; SOL-GEL TECHNIQUE; VACUUM EVAPORATION; PARTIAL SWITCHING; POLARIZATION REVERSAL;

D O I：

10.1143/JJAP.34.1061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Partial switching in ferroelectric PbZrxTi1-xO3 (PZT) thin films has been studied for adaptive-learning metal-ferroelectric-semiconductor field-effect transistor (MFSFET) applications. In particular, the effects of him quality on adaptive-learning processes in ferroelectric PZT thin films are discussed. Dimensionality factor n of the ferroelectric domain growth is estimated to be 1.3-1.4 for sol-gel grown PZT films and 2.0-2.1 for vacuum-evaporated materials. It is shown that this discrepancy results in the difference of the adaptive-learning processes. It is also demonstrated that the learning process in PZT films can gradually proceed by applying the short input pulses.

引用

页码：1061 / 1065

页数：5

共 8 条

[1] FERROELECTRIC DOMAIN SWITCHING [J].

ISHIBASHI, Y ;

TAKAGI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 31 (02) :506-+

[2]

Ishii H., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P435, DOI 10.1109/IEDM.1992.307395

[3] PROPOSAL OF ADAPTIVE-LEARNING NEURON CIRCUITS WITH FERROELECTRIC ANALOG-MEMORY WEIGHTS [J].

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :442-446

[4] SWITCHING KINETICS OF LEAD ZIRCONATE TITANATE SUB-MICRON THIN-FILM MEMORIES [J].

SCOTT, JF ;

KAMMERDINER, L ;

PARRIS, M ;

TRAYNOR, S ;

OTTENBACHER, V ;

SHAWABKEH, A ;

OLIVER, WF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :787-792

[5]

SHIBATA T, 1994, 1994 SOL STAT DEV MA, P346

[6] PARTIAL SWITCHING KINETICS OF FERROELECTRIC PBZRXTI1-XO3 THIN-FILMS PREPARED BY SOL-GEL TECHNIQUE [J].

TOKUMITSU, E ;

TANISAKE, N ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9B) :5201-5206

[7]

TOKUMITSU E, 1994, INT C ADVANCED MICRO, P637

[8]

TOKUMITSU E, 1994, 6TH INT S INT FERR M

← 1 →