ELECTRONIC CHARGE-DENSITIES AND THE RECURSION METHOD

[1] HAYDOCK R, 1980, SOLID STATE PHYS, V35, P216

[2] THE RECURSION METHOD AND THE ELECTRONIC CHARGE-DENSITY IN DIAMOND AND SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 491 - 493

[3] THE RECURSION METHOD AND A 1ST-PRINCIPLES TIGHT-BINDING CALCULATION OF THE BAND STRUCTURES OF DIAMOND AND SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 481 - 490

[4] BAND-GAPS AND ASYMPTOTIC-BEHAVIOR OF CONTINUED-FRACTION COEFFICIENTS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13): : 2891 - 2924

[5] GROUND-STATE PROPERTIES OF DIAMOND [J]. PHYSICAL REVIEW B, 1981, 24 (10) : 6121 - 6124

[1] HAYDOCK R, 1980, SOLID STATE PHYS, V35, P216

[2] THE RECURSION METHOD AND THE ELECTRONIC CHARGE-DENSITY IN DIAMOND AND SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 491 - 493

[3] THE RECURSION METHOD AND A 1ST-PRINCIPLES TIGHT-BINDING CALCULATION OF THE BAND STRUCTURES OF DIAMOND AND SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 481 - 490

[4] BAND-GAPS AND ASYMPTOTIC-BEHAVIOR OF CONTINUED-FRACTION COEFFICIENTS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13): : 2891 - 2924

[5] GROUND-STATE PROPERTIES OF DIAMOND [J]. PHYSICAL REVIEW B, 1981, 24 (10) : 6121 - 6124