DEFECT CHEMISTRY AND INTRINSIC CARRIER CONCENTRATION FOR HG1-XCDXTE(S) FOR X = 0.20, 0.40, AND 1.0

被引：29

作者：

SU, CH

LIAO, PK

BREBRICK, RF

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 05期

关键词：

D O I：

10.1007/BF02655295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：771 / 826

页数：56

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