AN ANALYTIC MODEL FOR THE MODULATION RESPONSE OF BURIED HETEROSTRUCTURE LASERS

被引：11

作者：

NG, WW

SOVERO, EA

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 09期

关键词：

D O I：

10.1109/JQE.1984.1072509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1008 / 1015

页数：8

共 15 条

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[5] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :343-351

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[7] DIRECT AMPLITUDE-MODULATION OF SHORT-CAVITY GAAS-LASERS UP TO X-BAND FREQUENCIES [J].

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[8]

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NG W, 1982, IEDM, P13

[10] DIRECT MODULATION OF SEMICONDUCTOR INJECTION-LASERS [J].

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (11) :1809-1821

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