A NEW NONLINEAR RELAXATION SCHEME FOR SOLVING SEMICONDUCTOR-DEVICE EQUATIONS

被引：6

作者：

BACH, KH ^{[1
]}

DIRKS, HK ^{[1
]}

MEINERZHAGEN, B ^{[1
]}

ENGL, WL ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1991年 / 10卷 / 09期

关键词：

D O I：

10.1109/43.85764

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In most cases steady-state semiconductor device equations are either solved simultaneously by Newton's method, by Gummel's decoupled nonlinear relaxation scheme, or a combination of both. A framework deriving such different iterative methods from underlying variable transformations is presented. Within that framework the introduction of a new variable establishes a new nonlinear relaxation scheme, which is significantly faster than Gummel's scheme in cases where it converges slowly, thereby avoiding the drawbacks of a simultaneous solution method.

引用

页码：1175 / 1186

页数：12

共 15 条

[1]

CHIN G, 1990, 3 NUPAD, P21

[2] COMPUTATION OF STEADY-STATE CMOS LATCHUP CHARACTERISTICS [J].