PHOTOLUMINESCENCE MEASUREMENTS ON ERBIUM-DOPED SILICON

Photoluminescence measurements of erbium-doped float-zone silicon, Czochralski-grown silicon and silicon oxide are reported. A striking similarity between the spectra of the latter two (oxygen-containing) materials is established. The structure of the spectra can be understood as due to the appearance of phonon replicas together with crystal-field-induced splitting. At higher temperatures an anti-Stokes line and so-called hot lines were observed. The analysis is consistent with the model of erbium impurities which are surrounded by oxygen atoms on nearest-neighbour positions in an arrangement with cubic and/or lower symmetry.