STRUCTURAL AND ELECTRONIC-PROPERTIES OF THE AL-GAAS(110) INTERFACE

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J]. PHYSICAL REVIEW B, 1985, 31 (02) : 879 - 887

[2] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[3] BACHRACH RZ, 1979, I PHYS C SER, V43, P1073

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[6] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[7] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163

[8] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 641 - 644

[9] PSEUDOPOTENTIALS AND TOTAL ENERGY CALCULATIONS [J]. PHYSICA SCRIPTA, 1982, T1 : 5 - 10

[10] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J]. PHYSICAL REVIEW B, 1985, 31 (02) : 879 - 887

[2] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[3] BACHRACH RZ, 1979, I PHYS C SER, V43, P1073

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[6] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[7] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163

[8] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 641 - 644

[9] PSEUDOPOTENTIALS AND TOTAL ENERGY CALCULATIONS [J]. PHYSICA SCRIPTA, 1982, T1 : 5 - 10

[10] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177