INTERFEROMETRIC MEASUREMENT OF ELECTRON-HOLE PAIR RECOMBINATION LIFETIME AS A FUNCTION OF THE INJECTION LEVEL

被引：6

作者：

BREGLIO, G

CUTOLO, A

SPIRITO, P

ZENI, L

机构：

[1] Department of Electronic Engineering, University of Naples, 80125, Napoli

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 10期

关键词：

D O I：

10.1109/55.244739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a new interferometric technique for the measurement of the recombination lifetime of electron-hole (eh) pairs as a function of their concentration, which can be measured with an error smaller than 10%. In addition, our approach is much more sensitive than the other optical methods described in the literature.

引用

页码：487 / 489

页数：3

共 15 条

[1] MEASUREMENT OF FREE-CARRIER LIFETIMES IN GAP BY PHOTOINDUCED MODULATION OF INFRARED ABSORPTION [J].