THERMAL-REACTION OF TA THIN-FILMS WITH POLYCRYSTALLINE DIAMOND

被引：11

作者：

CHEN, JS ^{[1
]}

KOLAWA, E ^{[1
]}

NICOLET, MA ^{[1
]}

POOL, FS ^{[1
]}

机构：

[1] JET PROPULS LAB,PASADENA,CA 91109

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90645-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal reaction of sputter-deposited Ta thin films with polycrystalline CVD-grown diamond substrates at temperatures between 700 degrees C and 1100 degrees C for 1 h is investigated by MeV He backscattering spectrometry, X-ray diffraction, and scanning electron microscopy. The product phases are polycrystalline Ta2C at 900 degrees C and TaC at 1000 degrees C with an initially 135 nm thick Ta film. The first phase formed conforms to the rule of Bene for metal-metal bilayers. No coexistence of Ta2C and TaC is observed during reaction. The second phase formed, TaC, is in thermodynamic equilibrium with carbon.

引用

页码：72 / 76

页数：5

共 24 条

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[2]

[Anonymous], 1979, PROPERTIES DIAMOND

[3]

BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

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