CMOS TRANSCONDUCTOR VCO WITH ADJUSTABLE OPERATING AND CENTER FREQUENCIES

被引：7

作者：

KEETH, B

BAKER, RJ

LI, HW

机构：

[1] Department of Electrical Engineering, University of Idaho, University Dr., Boise. Idaho 83725, 1910

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

CMOS INTEGRATED CIRCUITS; VOLTAGE CONTROLLED OSCILLATORS;

D O I：

10.1049/el:19951001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel monolithic VCO using a transconductance architecture and with adjustable operating and centre frequencies is presented. Oscillating frequencies from < 1 Hz to > 50 MHz were attained with external capacitors. Power dissipation from a 5V supply was 150 mW driving a 20 pF load. The die size was 400 x 1500 mu m(2) and was fabricated using a 2 mu m n-well double-metal CMOS process.

引用

页码：1397 / 1398

页数：2