SCANNING ELECTRON-BEAM LITHOGRAPHY FOR FABRICATION OF MAGNETIC-BUBBLE CIRCUITS

被引：18

作者：

CHANG, THP ^{[1
]}

HATZAKIS, M ^{[1
]}

WILSON, AD ^{[1
]}

SPETH, AJ ^{[1
]}

KERN, A ^{[1
]}

LUHN, H ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1147/rd.204.0376

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：376 / 388

页数：13

共 24 条

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BROERS, AN
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (08) : 1040 - &
[3] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
[4] CHANG THP, 1974, ELECTRON MICROSCOPY, V1, P650
[5] CHANG THP, 1974, ELECTRON ION BEAM SC, P580
[6] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE
HALLER, I
HATZAKIS, M
SRINIVASAN, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) : 251 - +
[7] HATAZKIS M, 1969, J ELECTROCHEM SOC, V116, P1033
[8] HATZAKIS M, 1971, 11TH S EL ION LAS BE, P337
[9] HATZAKIS M, 1974, 23 APPL POL S, P73
[10] HAWRYLUK RJ, 1974, ELECTRON ION BEAM SC, P87