BONDING WIRES TO QUANTIZED HALL RESISTORS

被引：4

作者：

LEE, KC

机构：

[1] National Institute of Standards and Technology, Technology Administration, U.S. Department of Commerce, Gaithersburg

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期

关键词：

D O I：

10.1109/19.377823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three different techniques for attaching wires to quantized Hall resistors with gold-germanium-nickel (AuGe/Ni) alloyed contacts were evaluated. The best quality and most robust samples were made by evaporating bonding pads that overlapped the alloyed contacts and the substrate, so that bonds could be made over the substrate rather than over the heterostructure.

引用

页码：249 / 253

页数：5

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