PROPERTIES OF ALLOYED AUGENI-CONTACTS ON GAAS/GAALAS-HETEROSTRUCTURES

被引：11

作者：

JUCKNISCHKE, D ^{[1
]}

BUHLMANN, HJ ^{[1
]}

HOUDRE, R ^{[1
]}

ILEGEMS, M ^{[1
]}

PY, MA ^{[1
]}

JECKELMANN, B ^{[1
]}

SCHWITZ, W ^{[1
]}

机构：

[1] SWISS FED OFF METROL,CH-3084 WABERN,SWITZERLAND

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1991年 / 40卷 / 02期

关键词：

D O I：

10.1109/TIM.1990.1032923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reproducible and robust techique of contacting GaAs/GaAlAs heterostructures using an evaporated AuGeNi alloy has been developed. The behavior of the electrical contacts to the two-dimensional electron gas has been studied in the quantum Hall regime. Contact resistance values of typically 10-50 m-OMEGA are obtained which are stable with time and thermal cycling. This type of contact is therefore well suited to be used for precision measurements of the quantized Hall resistance.

引用

页码：228 / 230

页数：3

共 6 条

[1]

BUHLMANN HJ, UNPUB J ELECTROCH SO

[2] OPTIMIZATION OF THE CONTACT GEOMETRY FOR ACCURATE QUANTIZED HALL RESISTANCE MEASUREMENTS [J].