COMPARISON OF THE QUANTIZED HALL RESISTANCE IN DIFFERENT GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引：9

作者：

JECKELMANN, B ^{[1
]}

SCHWITZ, W ^{[1
]}

BUHLMANN, HJ ^{[1
]}

HOUDRE, R ^{[1
]}

ILEGEMS, M ^{[1
]}

JUCKNISCHKE, D ^{[1
]}

PY, MA ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1991年 / 40卷 / 02期

关键词：

D O I：

10.1109/TIM.1990.1032924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantized Hall resistances of seven different GaAs/Al(x)Ga(1-x)As heterostructures with mobilities varying between 13 and 57 T-1 have been compared using a potentiometric measurement system. The mean difference between the quantized Hall resistances of the individual samples was found to be less than 3 x 10(-9).1

引用

页码：231 / 233

页数：3

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