PRECISE COMPARISONS OF QUANTIZED HALL RESISTANCES

被引：13

作者：

DELAHAYE, F

DOMINGUEZ, D

机构：

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1109/TIM.1987.6312674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：226 / 229

页数：4

共 6 条

[1] PRECISE QUANTIZED HALL RESISTANCE MEASUREMENTS IN GAAS/ALXGA1-XAS AND INXGA1-XAS/INP HETEROSTRUCTURES [J].

DELAHAYE, F ;

DOMINGUEZ, D ;

ALEXANDRE, F ;

ANDRE, JP ;

HIRTZ, JP ;

RAZEGHI, M .

METROLOGIA, 1986, 22 (02) :103-110

[2] QUANTUM HALL-EFFECT IN IN0.53GA0.47AS-INP HETEROJUNCTIONS WITH 2 POPULATED ELECTRIC SUBBANDS [J].

GULDNER, Y ;

VIEREN, JP ;

VOOS, M ;

DELAHAYE, F ;

DOMINGUEZ, D ;

HIRTZ, JP ;

RAZEGHI, M .

PHYSICAL REVIEW B, 1986, 33 (06) :3990-3993

[3]

LIPPMANN HJ, 1958, NATURFORSCHUNG, V13

[4] HALL VOLTAGE DEPENDENCE ON INVERSION-LAYER GEOMETRY IN THE QUANTUM HALL-EFFECT REGIME [J].

RENDELL, RW ;

GIRVIN, SM .

PHYSICAL REVIEW B, 1981, 23 (12) :6610-6614

[5] APPLICATION OF THE QUANTUM HALL-EFFECT IN METROLOGY [J].

VONKLITZING, K ;

EBERT, G .

METROLOGIA, 1985, 21 (01) :11-18

[6]

VONKLITZING K, 1981, FESTKOR-ADV SOLID ST, V21, P1

← 1 →