APPLICATION OF THE QUANTUM HALL-EFFECT IN METROLOGY

被引:32
作者
VONKLITZING, K [1 ]
EBERT, G [1 ]
机构
[1] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER
关键词
MAGNETIC FIELD EFFECTS - SEMICONDUCTOR DEVICES - Measurements;
D O I
10.1088/0026-1394/21/1/004
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The quantum Hall effect (QHE) is a phenomenon visible in Hall effect measurements on a two-dimensional electron gas in strong magnetic fields and at low temperatures. The experimental results on such systems in the limit of zero temperature demonstrate that the Hall resistance R//H as a function of the magnetic field B shows plateaux with plateau values which are, within the experimental uncertainty, independent of the material, the geometry of the device, and other parameters. For an ideal system R//H depends exclusively on fundamental constants, but for real experiments corrections may be necessary which are important, if the QHE is applied in metrology.
引用
收藏
页码:11 / 18
页数:8
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