学术探索
学术期刊
新闻热点
数据分析
智能评审

QUANTUM HALL-EFFECT IN IN0.53GA0.47AS-INP HETEROJUNCTIONS WITH 2 POPULATED ELECTRIC SUBBANDS

被引：35
作者：
GULDNER, Y
VIEREN, JP
VOOS, M
DELAHAYE, F
DOMINGUEZ, D
HIRTZ, JP
RAZEGHI, M
机构：
[1] LAB MICROSTRUCT & MICROELECTRON, F-92220 BAGNEUX, FRANCE
[2] LAB CENT IND ELECTR, F-92260 FONTENAY AUX ROSES, FRANCE
[3] THOMSON CSF, CENT RECH LAB, F-91401 ORSAY, FRANCE
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.33.3990
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3990 / 3993
页数：4
相关论文
共 16 条
  • [1] SUBBAND STRUCTURE OF AN ACCUMULATION LAYER UNDER STRONG MAGNETIC-FIELDS
    ANDO, T
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (02) : 411 - 417
  • [2] INFLUENCE OF A MAGNETIC-FIELD ON ELECTRON SUBBANDS IN A SURFACE SPACE-CHARGE LAYER
    BEINVOGL, W
    KAMGAR, A
    KOCH, JF
    [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4274 - 4280
  • [3] LOW-TEMPERATURE INVESTIGATIONS OF THE QUANTUM HALL-EFFECT IN INXGA1-XAS-INP HETEROJUNCTIONS
    BRIGGS, A
    GULDNER, Y
    VIEREN, JP
    VOOS, M
    HIRTZ, JP
    RAZEGHI, M
    [J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6549 - 6552
  • [4] TEMPERATURE-DEPENDENCE OF THE QUANTUM HALL RESISTANCE
    CAGE, ME
    FIELD, BF
    DZIUBA, RF
    GIRVIN, SM
    GOSSARD, AC
    TSUI, DC
    [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2286 - 2288
  • [5] PROGRESS IN RESISTANCE RATIO MEASUREMENTS USING A CRYOGENIC CURRENT COMPARATOR AT LCIE
    DELAHAYE, F
    REYMANN, D
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) : 316 - 319
  • [6] DELAHAYE F, UNPUB METROLOGIA
  • [7] QUANTUM HALL EFFECT IN MODULATION DOPED IN0.53GA0.47AS-INP HETEROJUNCTIONS.
    GULDNER, Y.
    HIRTZ, J.P.
    VIEREN, J.P.
    VOISIN, P.
    VOOS, M.
    RAZEGHI, M.
    [J]. 1982, V 43 (N 16): : 613 - 616
  • [8] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    GULDNER, Y
    VIEREN, JP
    VOISIN, P
    VOOS, M
    RAZEGHI, M
    POISSON, MA
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
  • [9] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
    KASTALSKY, A
    DINGLE, R
    CHENG, KY
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
  • [10] ELECTRONIC-PROPERTIES OF A HEAVILY-DOPED N-TYPE GAAS-GA1-XALXAS SUPER-LATTICE
    MORI, S
    ANDO, T
    [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 101 - 107
12