ELECTRONIC-PROPERTIES OF A HEAVILY-DOPED N-TYPE GAAS-GA1-XALXAS SUPER-LATTICE

[1] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477

[2] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[4] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[7] RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (25) : 1701 - 1704

[8] Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367

[9] INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6433 - 6441

[10] PROPERTIES OF ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS .1. SCREENING AND IMPURITY SCATTERING [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 1024 - &

[1] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477

[2] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[4] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[7] RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (25) : 1701 - 1704

[8] Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367

[9] INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6433 - 6441

[10] PROPERTIES OF ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS .1. SCREENING AND IMPURITY SCATTERING [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 1024 - &