RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE

被引：78

作者：

MANUEL, P ^{[1
]}

SAIHALASZ, GA ^{[1
]}

CHANG, LL ^{[1
]}

CHANG, CA ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1103/PhysRevLett.37.1701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1701 / 1704

页数：4

共 11 条

[1] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, LL
SEGMULLER, A
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41
[2] GROWTH OF A GAAS-GAAIAS SUPERLATTICE
CHANG, LL
ESAKI, L
HOWARD, WE
LUDEKE, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16
[3] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330
[4] RAMAN EFFECT IN CRYSTALS
LOUDON, R
[J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 423 - &
[5] Martin R. M., 1975, Light scattering in solids, P79
[6] THEORY OF ONE-PHONON RESONANCE RAMAN EFFECT
MARTIN, RM
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3676 - &
[7] PINCZUK A, 1970, 10 P INT C PHYS SEM, P727
[8] SMITH RA, 1961, WAVE MECHANICS CRYST, P409
[9] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[10] EFFECTS OF QUANTUM STATES ON PHOTOCURRENT IN A SUPERLATTICE
TSU, R
CHANG, LL
SAIHALASZ, GA
ESAKI, L
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (24) : 1509 - 1512