A LOW ON-RESISTANCE, HIGH-CURRENT GAAS POWER VFET

被引：9

作者：

PLUMTON, DL ^{[1
]}

YUAN, HT ^{[1
]}

KIM, TS ^{[1
]}

TADDIKEN, AH ^{[1
]}

LEY, V ^{[1
]}

KOLLMAN, RI ^{[1
]}

LAGNADO, I ^{[1
]}

JOHNSON, L ^{[1
]}

机构：

[1] USN,CTR COMMAND CONTROL & OCEAN SURVEILLANCE,DIV RDTE,SAN DIEGO,CA 92152

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 04期

关键词：

D O I：

10.1109/55.372495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new fabrication process for GaAs VFET's that results in excellent performance in a 10 A prototype designed for switching in low voltage synchronous rectifier applications, The new fabrication process uses a buried carbon-doped GaAs gate structure for the gate electrodes and an epitaxial overgrowth step, We have demonstrated 10 A devices with 3.5 m of gate width and 1.5 mOhm of on-resistance (specific on-resistance of 84 mu Ohm - cm(2)), The device required a 0.5 mu m channel etched between 0.5 mu m gates placing stringent requirements on the gate side wall etch profile and epitaxial doping uniformity.

引用

页码：142 / 144

页数：3

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