LATTICE ORIENTATION OF DEFECTS IN ION-IMPLANTED DIAMOND

被引：16

作者：

BRAUNSTEIN, G ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90828-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：387 / 393

页数：7

共 9 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[2] CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND
BRAUNSTEIN, G
KALISH, R
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 691 - 697
[3] DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND
BRAUNSTEIN, G
KALISH, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 416 - 418
[4] RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND
BRAUNSTEIN, G
TALMI, A
KALISH, R
BERNSTEIN, T
BESERMAN, R
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 139 - 144
[5] EISEN FH, 1973, CHANNELING, pCH14
[6] HIGH-TEMPERATURE ION-IMPLANTATION IN DIAMOND
LEE, YH
BROSIOUS, PR
CORBETT, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (01): : 237 - 242
[7] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS
LUGUJJO, E
MAYER, JW
[J]. PHYSICAL REVIEW B, 1973, 7 (05): : 1782 - 1791
[8] PRONKO PP, 1976, NUCL INSTRUM METHODS, V132, P249, DOI 10.1016/0029-554X(76)90742-4
[9] CARBON INTERSTITIAL IN DIAMOND LATTICE
WEIGEL, C
PEAK, D
CORBETT, JW
WATKINS, GD
MESSMER, RP
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2906 - 2915