Analysis of spectral response in P-type GaAs/GaInP QWIPs

被引：2

作者：

Hoff, J ^{[1
]}

Jelen, C ^{[1
]}

Slivken, S ^{[1
]}

Bigan, E ^{[1
]}

Razeghi, M ^{[1
]}

Brown, GJ ^{[1
]}

机构：

[1] WRIGHT LAB,MAT DIRECTORATE,WL MLPO,WRIGHT PATTERSON AFB,OH 45433

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1995年 / 18卷 / 04期

关键词：

712.1 Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 921.6 Numerical Methods - 933.3 Electronic Structure of Solids - 944.7 Radiation Measuring Instruments;

D O I：

10.1006/spmi.1995.1109

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x approximate to 0.03

引用

页码：249 / 257

页数：9

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