PARAMETRIC INVESTIGATION OF THE SHEATH POTENTIAL IN A LOW-FREQUENCY RF DISCHARGE

被引：19

作者：

CHAN, C ^{[1
]}

JIN, ZJ ^{[1
]}

WHITAKER, C ^{[1
]}

机构：

[1] NORTHEASTERN UNIV,DEPT ELECT & COMP ENGN,BOSTON,MA 02115

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1633 / 1638

页数：6

共 16 条

[1] BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE [J].

ANDO, K ;

AOZASA, M ;

PYON, RG .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :413-415

[2]

BELLINGER D, 1984, SOLID STATE TECHNOL, V27, P111

[3]

CHAN C, 1982, PHYS LETT A, V91, P4

[4]

Chapman B., 1980, GLOW DISCHARGE PROCE

[5]

CHEN FF, 1983, INTRO PLASMA PHYSICS

[6] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[7]

CONTIN A, 1974, 3RD INT C GAS DISCH, P625

[8] EFFECTS OF FREQUENCY ON OPTICAL-EMISSION, ELECTRICAL, ION, AND ETCHING CHARACTERISTICS OF A RADIO-FREQUENCY CHLORINE PLASMA [J].

DONNELLY, VM ;

FLAMM, DL ;

BRUCE, RH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2135-2144

[9]

GAGNE RRJ, 1972, J APPL PHYS, V43, P639

[10]

GASCADDEN A, 1962, P PHYS SOC, V79, P535

← 1 2 →