LATTICE DEFECT IN SELECTIVE EPITAXIAL SILICON AND LATERALLY OVERGROWN REGIONS ON SIO2

被引：20

作者：

KITAJIMA, H

FUJIMOTO, Y

KASAI, N

ISHITANI, A

ENDO, N

机构：

[1] NEC CORP LTD, FUNDAMENTAL RES LABS, KAWASAKI, KANAGAWA 213, JAPAN

[2] NEC CORP LTD, MICROELECTR RES LABS, SAGAMIHARA 229, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90141-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：264 / 276

页数：13

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[5]

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REID, GA ;

HULL, R .

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[9]

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[10]

ENDO N, 1983, 1983 IEDM TECH DIGES, P31

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