TUNNELING PROPERTIES OF SINGLE-CRYSTAL NB/NB2O5/PB JOSEPHSON-JUNCTIONS

[1] RESOLUTION OF CONTROVERSY ON TUNNELING IN NB [J]. PHYSICS LETTERS A, 1978, 69 (02) : 136 - 138

[2] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) : 1998 - 2008

[3] CELASCHI S, 1983, B AM PHYS SOC, V28, P423

[4] CELASCHI S, 1982 MAT RES SOC ANN, P241

[5] FELDMAN L, COMMUNICATION

[6] FINNEGAN TF, 1977, SUPERCONDUCTING QUAN, P381

[7] XPS AND AES STUDIES ON OXIDE-GROWTH AND OXIDE COATINGS ON NIOBIUM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 397 - 405

[8] Gurvitch M., 1981, International Electron Devices Meeting, P115

[9] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[10] ON RESONANT TUNNELING [J]. SURFACE SCIENCE, 1982, 122 (01) : 80 - 98

[1] RESOLUTION OF CONTROVERSY ON TUNNELING IN NB [J]. PHYSICS LETTERS A, 1978, 69 (02) : 136 - 138

[2] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) : 1998 - 2008

[3] CELASCHI S, 1983, B AM PHYS SOC, V28, P423

[4] CELASCHI S, 1982 MAT RES SOC ANN, P241

[5] FELDMAN L, COMMUNICATION

[6] FINNEGAN TF, 1977, SUPERCONDUCTING QUAN, P381

[7] XPS AND AES STUDIES ON OXIDE-GROWTH AND OXIDE COATINGS ON NIOBIUM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 397 - 405

[8] Gurvitch M., 1981, International Electron Devices Meeting, P115

[9] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[10] ON RESONANT TUNNELING [J]. SURFACE SCIENCE, 1982, 122 (01) : 80 - 98