FABRICATION OF 2-D PHOTONIC BANDGAP STRUCTURES IN GAAS/ALGAAS

被引：61

作者：

KRAUSS, T

SONG, YP

THOMS, S

WILKINSON, CDW

DELARUE, RM

机构：

[1] Department of Electronics & Electrical Engineering, The University Glasgow, Gl2 8LT, Scotland

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 17期

关键词：

GALLIUM ARSENIDE; ALUMINUM GALLIUM ARSENIDE; PHOTONIC BANDGAPS;

D O I：

10.1049/el:19940987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report thr first realisation of a two-dimensional photonic bandgap structure with a period of lambda(0)/2n in the GaAs/AlGaAs material system. The structure consists of a honeycomb lattice with a wall thickness of similar to 30nm and a period of 160nm. It was found that, to realise patterns of such small size and periodicity, it is crucial to control the shape of the exposed features.

引用

页码：1444 / 1446

页数：3

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