OPTICALLY PUMPED ALL-EPITAXIAL WAFER-FUSED 1.52 MU-M VERTICAL-CAVITY LASERS

被引：19

作者：

BABIC, DI ^{[1
]}

DUDLEY, JJ ^{[1
]}

STREUBEL, K ^{[1
]}

MIRIN, RP ^{[1
]}

HU, EL ^{[1
]}

BOWERS, JE ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT PHOTON & MICROWAVE ENGN,S-16440 KISTA,SWEDEN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 09期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; WAFER BONDING;

D O I：

10.1049/el:19940495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate for the first time the room-temperature pulsed operation of all-epitaxial vertical cavity lasers operating at 1.52mum using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AIAs/GaAs mirror using the wafer fusion technique.

引用

页码：704 / 706

页数：3

共 12 条

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