SILICON SELF-DIFFUSION IN QUARTZ

被引:53
作者
JAOUL, O [1 ]
BEJINA, F [1 ]
ELIE, F [1 ]
ABEL, F [1 ]
机构
[1] UNIV PARIS 07,PHYS SOLIDES GRP,CNRS,URA 17,F-75251 PARIS 05,FRANCE
关键词
D O I
10.1103/PhysRevLett.74.2038
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
30Si diffusion was measured in quartz along c axis in the -phase field, at T=1400 1600°C by Rutherford backscattering spectrometry and the 30Si(p,)P31 resonant nuclear reaction. The diffusion coefficient D(cm2 s-1)=10(6.12.7)exp[(- 7.61 eV)/kT], comparable to D of silicon in vitreous SiO2. We suggest Frenkel pairs as majority defects with diffusion occurring by interstitial mechanism. © 1995 The American Physical Society.
引用
收藏
页码:2038 / 2041
页数:4
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