ATOMIC ARRANGEMENT IN THE GLASSY SEMICONDUCTOR GE30AS20SE50

被引:3
作者
FOX, ND
ESQUIVIAS, L
JIMENEZGARAY, R
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D O I
10.1016/0025-5408(86)90043-7
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:1167 / 1174
页数:8
相关论文
共 25 条
[1]  
Alberdi C., 1981, Anales de Fisica, Serie A (Fenomenos e Interacciones), V77, P41
[2]  
BORISOVA AU, 1981, GLASSY SEMICONDUCTOR
[5]  
De La Rosa Fox N., 1984, Anales de Fisica, Serie A (Fenomenos e Interacciones), V80, P239
[6]  
DELAROSAFOX N, 1986, PHYS REV B, V33, P4049
[7]   STRUCTURAL STUDY OF AMORPHOUS AL0.20AS0.50TE0.30, AL0.10AS0.40TE0.50 AND AL0.10AS0.20TE0.70 BY X-RAY-DIFFRACTION .2. [J].
ESQUIVIAS, L ;
SANZ, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 70 (02) :221-232
[8]  
ESQUIVIAS L, J NONCRYST SOLIDS
[9]  
FAWETT RW, 1981, J NONCRYST SOLIDS, V8, P369
[10]   RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].
FEINLEIB, J ;
DENEUFVILLE, J ;
MOSS, SC ;
OVSHINSKY, SR .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+