HIGH-TEMPERATURE OPERATION OF HIGH-POWER INGAALP VISIBLE-LIGHT LASER-DIODES WITH AN IN0.5+DELTA-GA0.5-DELTA-P ACTIVE LAYER

High-power and high-reliable operation of transverse-mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02-mu-m) active layer. A composition-shifted In0.5 + delta-Ga0.5 - delta-P active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high-reflection coatings. A high-power cw operation above 30 mW output power was maintained even at a 60-degrees-C heat-sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50-degrees-C.