VARIATIONS OF ELECTRONIC STATES IN LA2-XSRXCUO4 (X=O TO 0.30) INVESTIGATED BY SCANNING TUNNELING SPECTROSCOPY

被引：4

作者：

MATSUURA, D ^{[1
]}

MIKI, H ^{[1
]}

MATUNARI, S ^{[1
]}

KANAI, M ^{[1
]}

KAWAI, T ^{[1
]}

机构：

[1] RITSUMEIKAN UNIV, DEPT ELECT & ELECTR ENGN, SHIGA 525, JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.52.R3888

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning-tunneling-spectroscopy measurements have been performed on as-grown and oxygen-annealed La2-xSrxCuO4 thin films with 0 less than or equal to x less than or equal to 0.30 and the variations of the density of states (DOS) near the Fermi level (E(F)) have been systematically investigated. Each spectrum has a characteristic shape in each doping: semiconductor, superconductor, and metal. The shape of the DOS directly correlates with the carrier concentration rather than Sr concentration or oxygen content. The DOS around the Fermi level gradually appears with tailing both from the conduction-band and the valence-band edges accompanied with the increase of carrier concentration. The change of DOS above E(F) is noticeable compared to that below E(F) within the underdoped region.

引用

页码：R3888 / R3891

页数：4

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