STUDY ON ZN DIFFUSION IN GAAS AND ALXGA1-XAS(X LESS-THAN-OR-EQUAL-TO 0.4) AT TEMPERATURES FROM 726-DEGREES-C TO 566-DEGREES-C

被引：20

作者：

MATSUMOTO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 05期

关键词：

D O I：

10.1143/JJAP.22.829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：829 / 835

页数：7

共 18 条

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[9] QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES [J].

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