2ND-HARMONIC GENERATION BY AN SIO2-SI INTERFACE - INFLUENCE OF THE OXIDE LAYER

被引：52

作者：

KULYUK, LL ^{[1
]}

SHUTOV, DA ^{[1
]}

STRUMBAN, EE ^{[1
]}

AKTSIPETROV, OA ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,USSR

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1991年 / 8卷 / 08期

关键词：

D O I：

10.1364/JOSAB.8.001766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A method that uses second-harmonic generation is applied to the study of the oxidized Si(111) surface by in situ control of thermal and synthetic oxide etching with monolayer atomic resolution. It is shown that the thin oxide layer that is adjacent to the Si surface (with a 5-10-angstrom thickness) exerts a strong influence on the reflected second-harmonic intensity. The contribution of the remaining bulk oxide is insignificant. Various contributions to the nonlinear polarization in the SiO2-Si interface, such as the static electric field, the inhomogeneous deformation, and the effect of a crystalline oxide layer, are considered.

引用

页码：1766 / 1769

页数：4

共 17 条

[1]

AKTSIPETROV OA, 1986, ZH EKSP TEOR FIZ, V64, P167

[2]

AKTSIPETROV OA, 1984, SOV PHYS DOKL, V29, P62

[3]

EMELYANOV AV, 1987, SOV PHYS POVERKHNOST, V11, P44

[4] INHOMOGENEOUS DEFORMATION OF SILICON SURFACE-LAYERS PROBED BY 2ND-HARMONIC GENERATION IN REFLECTION [J].