PELTIER COOLING AT A IN-INP INTERFACE

被引:8
作者
ABULFADL, A [1 ]
STEFANAKOS, EK [1 ]
机构
[1] UNIV IDAHO,DEPT ELECT ENGN,MOSCOW,ID 83843
关键词
D O I
10.1063/1.322389
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4627 / 4628
页数:2
相关论文
共 6 条
[1]  
DANIELE JJ, 1975, 1974 P S GAAS REL CO
[2]   THEORY OF THE THERMOELECTRIC POWER OF SEMICONDUCTORS [J].
HERRING, C .
PHYSICAL REVIEW, 1954, 96 (05) :1163-1187
[3]   THERMAL CONDUCTIVITY + SEEBECK COEFFCIENT OF INP [J].
KUDMAN, I ;
STEIGMEIER, EF .
PHYSICAL REVIEW, 1964, 133 (6A) :1665-+
[4]   ELECTRIC-CURRENT CONTROLLED GROWTH AND DOPING MODULATION IN GAAS LIQUID-PHASE EPITAXY [J].
LAWRENCE, DJ ;
EASTMAN, LF .
JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) :267-275
[5]   MEASUREMENT OF EFFECTIVE MASS OF ELECTRONS IN INP BY INFRA-RED FARADAY EFFECT [J].
MOSS, TS ;
WALTON, AK .
PHYSICA, 1959, 25 (11) :1142-1144
[6]   MEASUREMENTS OF PELTIER COOLING AT A GA-GAAS INTERFACE USING A LIQUID-PHASE EPITAXY SYSTEM [J].
STEFANAKOS, EK ;
ABULFADL, A ;
WORKMAN, MD .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3002-3005