HIGH-TEMPERATURE DIAMOND P-N-JUNCTION - B-DOPED HOMOEPITAXIAL LAYER ON N-DOPED SUBSTRATE

被引:19
作者
BORST, TH
STROBEL, S
WEIS, O
机构
[1] Abteilung Festkörperphysik, Universität Ulm
关键词
D O I
10.1063/1.114325
中图分类号
O59 [应用物理学];
学科分类号
摘要
Boron-doped homoepitaxial layers have been selectively grown on synthetic type Ib substrates of (100) cut. Ohmic contacts were formed by evaporating a Mo/Pt/Au sandwich and subsequent annealing at 950 degrees C for 1/2 h. Current-voltage characteristics of diode type could be taken in vacuum in the temperature range 360-900 degrees C. Green light emission due to electroluminescence was observed from the junction area showing a maximum at a wavelength of 534 nm corresponding to a photon energy of 2.32 eV. The normalized emission spectrum was measured over the temperature range 320-440 degrees C with the device in air and was found independent of temperature and baron concentration. (C) 1995 American Institute of Physics.
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页码:2651 / 2653
页数:3
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