TRANSIENT INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS FROM PICOSECONDS TO MILLISECONDS

被引：12

作者：

VARDENY, Z ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90585-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：317 / 324

页数：8

相关论文

共 21 条

[11] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE
TIEDJE, T
CEBULKA, JM
MOREL, DL
ABELES, B
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428
[12] TIEDJE T, 1981, SOLID STATE COMMUN, V37, P44
[13] CORRECTION
VARDENY, Z
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (09) : 700 - 700
[14] RECOMBINATION KINETICS IN A-SI-H
VARDENY, Z
OCONNOR, P
RAY, S
TAUC, J
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (16) : 1108 - 1108
[15] HOT-CARRIER THERMALIZATION IN AMORPHOUS-SILICON
VARDENY, Z
TAUC, J
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (18) : 1223 - 1226
[16] PICOSECOND TRAPPING OF PHOTOCARRIERS IN AMORPHOUS-SILICON
VARDENY, Z
STRAIT, J
TAUC, J
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 580 - 582
[17] OPTICAL STUDIES OF EXCESS CARRIER RECOMBINATION IN A-SI-H - EVIDENCE FOR DISPERSIVE DIFFUSION
VARDENY, Z
OCONNOR, P
RAY, S
TAUC, J
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (19) : 1267 - 1271
[18] PICOSECOND DYNAMICS OF CARRIERS IN AMORPHOUS-SEMICONDUCTORS
VARDENY, Z
TAUC, J
FANG, CJ
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 539 - 542
[19] PICOSECOND PHOTOINDUCED TRANSMISSION ASSOCIATED WITH DEEP TRAPS IN PHOSPHORUS-DOPED A-SI-H
VARDENY, Z
STRAIT, J
PFOST, D
TAUC, J
ABELES, B
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (16) : 1132 - 1135
[20] VARDENY Z, 1983, SEMICONDUCTOR PROCES