400 KHZ RADIOFREQUENCY BIASED ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR AL-SI-CU PATTERNING

被引：9

作者：

SAMUKAWA, S ^{[1
]}

TOYOSATO, T ^{[1
]}

WANI, E ^{[1
]}

机构：

[1] ANELVA CORP,DEPT DRY ETCHING ENGN,TOKYO 183,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.585452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A radio-frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology with efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching has been developed. Substrate is located at the ECR position (875 G position) and etching is carried out with 400 kHz rf bias power. This technology achieves high etching rate (more than 5000 angstrom/min), excellent uniformity (+/- 5%), highly anisotropic and Cu residue-free etching using only Cl2 and Cl2/BCl3 gas plasma at a low 100-degrees-C substrate temperature. These characteristics are achieved by the combination of dense and uniform ECR plasma generation and efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

引用

页码：1471 / 1477

页数：7

共 6 条

[1]

BURCE RH, 1981, P ELECTRO CHEM SOC, V811, P243

[2] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].