X-RAY, REFLECTION HIGH ELECTRON-ENERGY DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF INSE AND GAMMA-IN2SE3 THIN-FILMS GROWN BY MOLECULAR-BEAM DEPOSITION

InxSey thin films have been grown on amorphous substrates by molecular beam deposition of indium and selenium under ultra high vacuum. The growth conditions of InSe and gamma-In2Se3 thin films have been investigated by X-ray diffraction, reflection high energy electron diffraction and X-ray photoelectron spectroscopy measurements. A phase diagram of InxSey thin films has been determined as a function of substrate temperature and equivalent partial pressure ratio R = P-Se/IPIn. A two-dimensional growth mode of InSe thin films is observed by reflection high energy electron diffraction investigations for 225 degrees C<T-s<350 degrees C. The selenium incorporation is discussed as a function of substrate temperature and equivalent partial pressure ratio R.