LOW-VOLTAGE DIRECT-CURRENT ELECTRO-LUMINESCENCE IN ZNS-RE THIN-FILMS

[1] ALFREY GF, 1955, P PHYS SOC B, V78, P775

[2] ELECTROLUMINESCENCE OF ZNS LUMOCEN DEVICES CONTAINING RARE-EARTH AND TRANSITION-METAL FLUORIDES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2512 - &

[3] PHOTOLUMINESCENCE OF ZNS-TBF3 THIN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (06) : 794 - &

[4] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 210 - &

[5] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF THIN-FILMS OF ZNS DOPED WITH RARE-EARTH METALS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2314 - &

[6] OKAMOTO K, 1979, APPL PHYS LETT, V35, P508, DOI 10.1063/1.91189

[7] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 698 - 702

[8] EVAPORATED ZINC SULFIDE FILMS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1951, 41 (03) : 201 - 202

[9] ANNEALING STUDIES OF ERBIUM-IMPLANTED ZINC-SULFIDE [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (03): : 209 - 222

[10] LOW-VOLTAGE, REVERSE-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (04) : 705 - 709

[1] ALFREY GF, 1955, P PHYS SOC B, V78, P775

[2] ELECTROLUMINESCENCE OF ZNS LUMOCEN DEVICES CONTAINING RARE-EARTH AND TRANSITION-METAL FLUORIDES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2512 - &

[3] PHOTOLUMINESCENCE OF ZNS-TBF3 THIN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (06) : 794 - &

[4] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 210 - &

[5] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF THIN-FILMS OF ZNS DOPED WITH RARE-EARTH METALS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2314 - &

[6] OKAMOTO K, 1979, APPL PHYS LETT, V35, P508, DOI 10.1063/1.91189

[7] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 698 - 702

[8] EVAPORATED ZINC SULFIDE FILMS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1951, 41 (03) : 201 - 202

[9] ANNEALING STUDIES OF ERBIUM-IMPLANTED ZINC-SULFIDE [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (03): : 209 - 222

[10] LOW-VOLTAGE, REVERSE-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (04) : 705 - 709