EFFECT OF ZN DOPING ON DIFFERENTIAL GAIN AND DAMPING OF 1.55-MU-M INGAAS INGAASP MQW LASERS

被引：13

作者：

LEALMAN, IF

COOPER, DM

PERRIN, SD

HARLOW, MJ

机构：

[1] BT Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

LASERS; SEMICONDUCTOR DOPING; DAMPING; DIFFERENTIAL GAIN; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The differential gain and nonlinear damping in 16 well MQW lasers has been studied using relative intensity noise (RIN) measurements. Zinc doping the active region increases the differential gain by 50% to 10(-19) m2 and reduces the nonlinear damping factor by 20% to 0.20 nS. This represents a maximum intrinsic 3 dB bandwidth of 45 GHz.

引用

页码：1032 / 1034

页数：3

共 7 条

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