PHOTOELECTROCHEMICAL INFORMATION-STORAGE USING AN AZOBENZENE DERIVATIVE

HIGH-DENSITY information storage is becoming an increasingly important technological objective. The 'heat-mode' storage techniques (in which only the thermal energy of laser light is used in the recording process and hence information usually stored as a physical change of the storage media) that are used in current optical memories are limited by the diffraction properties of light1, and the alternative 'photon-mode' (in which information is stored as a photon-induced chemical change of the storage media) has attracted attention recently for high-density storage. The most promising candidates for realizing this mode seem to be photochro-ism and photochemical hole burning; but these have some intrinsic drawbacks1,2. Here we present a novel 'photon-mode' technique that uses the photoelectrochemical properties of a Langmuir-Blodgett film of an azobenzene derivative. The system can be interconverted photochemically or electrochemically between three chemical states, and this three-state system is shown to provide a potential storage process that allows for ultra-high storage density, multi-function memory and non-destructive information readout. © 1990 Nature Publishing Group.