REACTIVE ION ETCHING OF TA-SILICIDE POLYSILICON DOUBLE-LAYERS FOR THE FABRICATION OF INTEGRATED-CIRCUITS

被引：29

作者：

MATTAUSCH, HJ ^{[1
]}

HASLER, B ^{[1
]}

BEINVOGL, W ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,OTTO HAHN RING 6,D-8000 MUNICH 83,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期

关键词：

D O I：

10.1116/1.582534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TANTALUM SILICON ALLOYS

引用

页码：15 / 22

页数：8

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[5]

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[7]

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[8]

KINSBRON E, 1981, 50TH INT THIN FILM C

[9]

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MAYER N, COMMUNICATION