IDENTIFICATION OF INFRARED-ABSORPTION PEAKS OF AMORPHOUS SILICON-CARBON ALLOY BY THERMAL ANNEALING

[1] ABELES A, 1984, SEMICONDUCTORS SEM C, V21, pCH12

[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] THE AMORPHOUS SI/SIC HETEROJUNCTION COLOR-SENSITIVE PHOTOTRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 64 - 65

[4] PHONONS IN AMORPHOUS SILICA [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2942 - 2952

[5] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[6] INFRARED-ABSORPTION AND BONDING IN AMORPHOUS HYDROGENATED SILICON CARBON ALLOYS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (09) : 1935 - 1948

[7] WHITE PHOTO-LUMINESCENCE OF AMORPHOUS SILICON-CARBON ALLOY PREPARED BY GLOW-DISCHARGE DECOMPOSITION OF TETRAMETHYLSILANE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 536 - 537

[8] SAKAI H, 1984, 1ST INT PHOT SCI ENG, P591

[9] Socrates G., 1980, INFRARED CHARACTERIS

[10] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[1] ABELES A, 1984, SEMICONDUCTORS SEM C, V21, pCH12

[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] THE AMORPHOUS SI/SIC HETEROJUNCTION COLOR-SENSITIVE PHOTOTRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 64 - 65

[4] PHONONS IN AMORPHOUS SILICA [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2942 - 2952

[5] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[6] INFRARED-ABSORPTION AND BONDING IN AMORPHOUS HYDROGENATED SILICON CARBON ALLOYS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (09) : 1935 - 1948

[7] WHITE PHOTO-LUMINESCENCE OF AMORPHOUS SILICON-CARBON ALLOY PREPARED BY GLOW-DISCHARGE DECOMPOSITION OF TETRAMETHYLSILANE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 536 - 537

[8] SAKAI H, 1984, 1ST INT PHOT SCI ENG, P591

[9] Socrates G., 1980, INFRARED CHARACTERIS

[10] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949